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1998-09--2001-07   ÉϺ£½»Í¨´óѧ   ²©Ê¿Ñо¿Éú

   

   

   

2011-02~ÏÖÔÚ, Öйú¿ÆѧԺÉϺ£Î¢ÏµÍ³ÓëÐÅÏ¢¼¼ÊõÑо¿Ëù, Ñо¿Ô±
2005-08~2008-02,ÈÕ±¾¶«¾©¹¤Òµ´óѧ, ¹«ÅÉ Ñо¿Ô±
2004-07~2004-09,°Ä´óÀûÑÇLa Trobe University, ¹«ÅÉ ·ÃÎÊѧÕß
2001-07~2011-01,ÉϺ£½»Í¨´óѧ, ½Ìʦ
1998-09~2001-07,ÉϺ£½»Í¨´óѧ, ²©Ê¿Ñо¿Éú

2018-01-01-½ñ,Ì«ÑôÄÜѧ±¨, ±àί
2017-11-01-½ñ,Öйú¿ÉÔÙÉúÄÜԴѧ»á¹âµçרҵίԱ»á, ίԱ
2016-05-01-½ñ,Ì«ÑôÄÜ ±àί, ±àί
2011-10-01-½ñ,ÉϺ£ÊÐÌ«ÑôÄÜѧ»á, ÀíÊÂ
2009-09-01-½ñ,ÖйúÐÂÄÜԴѧ»á, ÀíÊÂ

   

   

   

£¨ 1 £© Ò»ÖÖͭпÎøÁò±¡Ä¤µÄÖƱ¸·½·¨, 2017, µÚ 2 ×÷Õß, ×¨ÀûºÅ: 201610573931.X
£¨ 2 £© Ò»ÖÖÖƱ¸Í­î÷ïØÎøÌ«Ñôµç³ØÎüÊÕ²ãµÄ·½·¨, 2018, µÚ 2 ×÷Õß, ×¨ÀûºÅ: 201610550956.8
£¨ 3 £© ¾ßÓеþ²ã¼õ·´ÌØÐԵľ§Ìå¹èÒìÖʽáÌ«Ñôµç³Ø¼°ÆäÖƱ¸·½·¨, 2017, µÚ 4 ×÷Õß, ×¨ÀûºÅ: 2016 1049 4414.3
£¨ 4 £© Ë«ÃæÊܹâµÄ¾§Ìå¹è/±¡Ä¤¹èÒìÖʽáÌ«ÑôÄܵç³Ø¼°ÖÆ×÷·½·¨, 2017, µÚ 2 ×÷Õß, ×¨ÀûºÅ: 201710416600.x
£¨ 5 £© Ò»ÖÖÓÃÓÚÖÆ×÷͸Ã÷µ¼µçÑõ»¯ÎﱡĤµÄ¶ÆĤÉ豸¼°¶ÆĤ·½·¨, 2016, µÚ 2 ×÷Õß, ×¨ÀûºÅ: 201610975301.5

   

£¨1£© MoO x modified ITO/a-Si:H(p) contact for silicon heterojunction solar cell application, Materials Research Bulletin, 2018, µÚ 11 ×÷Õß
£¨2£© High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells, Frontiers in Energy, 2017, µÚ 1 ×÷Õß
£¨3£© Characterization of transparent conductive oxide films and its influence on amorphous/crystalline silicon heterojunction solar cells, Japanese Journal of Applied Physics, 2017, µÚ 1 ×÷Õß
£¨4£© Role of the intermediate phases InSe and Cu 9 (In 1%x Ga x ) 4 in fabricating Cu(In 1%x Ga x )Se 2 films by selenization of Cu–In–Ga precursors, Japanese Journal of Applied Physics, 2017, µÚ 11 ×÷Õß
£¨5£© Achieving composition controlled CU2ZnSnS4 films by sulfur-free annealing process, Japanese Journal of Applied Physics, 2017, µÚ 11 ×÷Õß
£¨6£© Tuning the band gap of Cu(In,Ga)Se2 thin films by simultaneous selenization/sulfurization, Materials Letters, 2016, µÚ 11 ×÷Õß
£¨7£© Underdense a-Si:H film capped by a dense film as the passivation layer of a silicon heterojunction solar cell, Journal of Applied Physics, 2016, µÚ 4 ×÷Õß
£¨8£© Structural, electrical and optical properties of highly crystalline indium tin oxide films fabricated by RPD at room temperature, Materilas Letters, 2016, µÚ 11 ×÷Õß
£¨9£© Role of the intermediate phases InSe and Cu9(In1-xGax)4 in fabricating CIGS films by selenization of Cu-In-Ga precursors, Japanese Journal of Applied Physics, 2016, µÚ 11 ×÷Õß
£¨10£© Role of the buffer at the interface of intrinsic a-Si:H and p-type a-Si:H on amorphous/crystalline silicon heterojunction solar cells, Applied Physics Letter, 2015, µÚ 1 ×÷Õß
£¨11£© Role of Al2O3intermediate layer for improving the quality ofpolycrystalline-silicon film in inverted aluminum-induced layerexchange, applied surface science, 2015, µÚ 2 ×÷Õß
£¨12£© High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells, solar energy materials and solar cells, 2014, µÚ 1 ×÷Õß
£¨13£© Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide, Thin Solid Films, 2014, µÚ 3 ×÷Õß
£¨14£© Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions, applied physics express, 2014, µÚ 11 ×÷Õß
£¨15£© Tungsten-Doped Indium Oxide Thin Film as an Effective High-Temperature Copper Diffusion Barrier, ECS Solid State Letters, 2014, µÚ 11 ×÷Õß
£¨16£© Roles of the Fermi level of doped a-Si:H and band offsets at a-Si:H/c-Si interfaces in n-type HIT solar cells, solar energy, 2013, µÚ 11 ×÷Õß
£¨17£© high quality of IWO films prepared at room temperature by reactive plasma deposition for photovoltaic devices, Journal of physics D: applied physics, 2013, µÚ 2 ×÷Õß
£¨18£© Investigation on energy band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIA, Journal of Applied Physics, 2011, µÚ 2 ×÷Õß
£¨19£© Investigation of a-Si (N+)/c-Si (P) Hetero-Junction Solar Cell through AFORS-HET Simulation, Surface and Interface Analysis, 2011, µÚ 2 ×÷Õß
£¨20£© Effects of Mg content and B doping on structural,electrical and optical properties of Zn1_xMgxO thin films prepared by MOCVD, Journal of crystal growth, 2010, µÚ 2 ×÷Õß

   

   

£¨ 1 £© ³¬¸ßЧHITÐÍÌ«Ñôµç³ØµÄÑо¿Ó뿪·¢, Ö÷³Ö, ²¿Î¯¼¶, 2010-12--2013-05
£¨ 2 £© MW¼¶±¡Ä¤¹è/¾§Ìå¹èÒìÖʽáÌ«Ñôµç³Ø²úÒµ»¯¹Ø¼ü¼¼Êõ, Ö÷³Ö, ¹ú¼Ò¼¶, 2012-01--2014-12
£¨ 3 £© ±¡Ä¤¹è/¾§Ìå¹èÒìÖʽá¸ßЧÂÊÌ«Ñôµç³ØºÏ×÷Ñо¿, Ö÷³Ö, Ñо¿Ëù£¨Ñ§Ð££©, 2012-01--2014-12
£¨ 4 £© ²»Í¬Æ·Öʵµ´ÎNÐ͵¥¾§¹èƬ¶Ôµç³Øת»»Ð§ÂʵÄÓ°Ïì, Ö÷³Ö, Ôº¼¶, 2015-09--2016-12
£¨ 5 £© Surface micro/nano structure and passivation for multicrystalline silicon heterojunction solar cell, Ö÷³Ö, Ñо¿Ëù£¨Ñ§Ð££©, 2015-05--2016-12
£¨ 6 £© ¹ú¼ÒJGÏîÄ¿, Ö÷³Ö, ¹ú¼Ò¼¶, 2016-12--2019-12
£¨ 7 £© Æ½Á÷²ã·ÉͧÇáÖʸßЧ̫ÑôÄܵç³ØÑÐÖÆÓë×ÛºÏÆÀ²â, ²ÎÓë, ²¿Î¯¼¶, 2017-01--2019-12
£¨ 8 £© Ë«Ãæ·¢µçÌ«Ñôµç³Ø±ê¶¨¼°¼ì²â¼¼ÊõÑо¿, ²ÎÓë, Ê¡¼¶, 2017-07--2020-06
£¨ 9 £© ÁÙ½ü¿Õ¼ä¿ÆѧʵÑéϵͳ-ÁÙ½ü¿Õ¼ä¿ÆѧµÍËÙ¿ÆѧʵÑéƽ̨¼¼Êõ-ÇòÔØÁÙ½ü¿Õ¼äÌ«ÑôÄÜÎÞÈË»úϵͳ-ÁÙ½ü¿Õ¼äÓøßЧ¿É¿¿ÄÜԴϵͳ, ²ÎÓë, ²¿Î¯¼¶, 2018-01--2022-12
£¨ 10 £© ÈýÏ¿×ʱ¾¿Ø¹É£¨Ïã¸Û£©ÓÐÏÞ¹«Ë¾»Æ½ðÕµÏîĿѡƸÁ¿×Ó¹âµçÌ«ÑôÄܵç³Ø¼¼Êõ¾¡µ÷, Ö÷³Ö, Ôº¼¶, 2018-06--2018-09

£¨1£©Role of H2O in the characterization of the IWOH films prepared by reactive plasma deposition   Fanying Meng, Jianhua Shi, Zhengxin Liu   2017-08-27
£¨2£©Characterization of Transparent Conductive Oxide films and its Influence on Amorphous/Crystalline Silicon Heterojunction (SHJ) Solar Cells   2016-09-26
£¨3£©3-stage-process of emitter layer for industrial high efficiency SHJ solar cell with 100µm-thick silicon wafer   Fanying Meng   2015-11-28
£¨4£©R&D of Silicon heterojunction (SHJ) solar cells in SIMIT and Trina joint-Lab   Fanying Meng   2014-07-30
£¨5£©High-mobility IWO films fabricated at low temperature and its application to solar cells   Fanying Meng,Jianhua Shi, Zhengxin Liu   2013-10-31